VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 1 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 70 a features ? high surge capability ? high voltage input rectification ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? ac switches ? high voltage input rectification (soft start) ? high current crow-bar ? other phase-control circuits ? designed to be used with vishay input diodes, switches, and output rectifiers which are available in identical package outlines description the vs-70tps..pbf high voltage series of silicon controlled rectifiers are specif ically designed for high and medium power switching, and phase control applications. product summary package super to-247 diode variation single scr i t(av) 70 a v drm /v rrm 1200 v, 1600 v v tm 1.25 v i gt 100 ma t j - 40 c to 125 c (g) 3 2 (a) 1 (k) super to-247 major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 70 a i rms lead current limitation 75 v rrm /v drm range 1200/1600 v i tsm 1100 a v t 100 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm /v drm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma VS-70TPS12PBF 1200 1300 15 vs-70tps16pbf 1600 1700
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 2 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 82 c, 180 conduction half sine wave 70 a maximum continuous rms on-state current as ac switch i t(rms) lead current limitation 75 maximum peak, one-cycle non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied initial t j = t j maximum 930 10 ms sine pulse, no voltage reapplied 1100 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 4325 a 2 s 10 ms sine pulse, no voltage reapplied 6115 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 61 150 a 2 ? s low level value of threshold voltage v t(to)1 t j = 125 c 0.916 v high level value of threshold voltage v t(to)2 1.21 low level value of on-state slope resistance r t1 4.138 m ? high level value of on-state slope resistance r t2 3.43 maximum peak on -state voltage v tm 100 a, t j = 25 c 1.4 v maximum rate of rise of turned-on current di/dt t j = 25 c 150 a/s maximum holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, t j = 25 c 200 ma maximum latching current i l anode supply = 6 v, resistive load , t j = 25 c 400 maximum reverse and direct leakage current i rrm /i drm t j = 25 c v r = rated v rrm /v drm (t j = t j max., linear to 80 % v drm = r g -k = open) 1.0 t j = 125 c 15 maximum rate of rise of off-state voltage dv/dt t j = 125 c 500 v/s triggering parameter symbol test conditions values units maximum peak gate power p gm t = 30 s 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc ga te voltage to trigger v gt t j = - 40 c anode supply = 6 v resistive load 1.8 t j = 25 c 1.5 t j = 125 c 1.1 maximum required dc ga te current to trigger i gt t j = - 40 c anode supply = 6 v resistive load 150 ma t j = 25 c 100 t j = 125 c 80 maximum dc gate volt age not to trigger v gd t j = 125 c, v drm = rated value 0.25 v maximum dc gate curr ent not to trigger i gd 6ma
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 3 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc fig. 1 - current rating characteristics fig. 2 - current rating characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.27 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, sm ooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style super to-247 70tps12 70tps16 ? r thj-hs conduction per junction device sine half wave conduction re ctangular wave conduction units 180 120 90 60 30 180 120 90 60 30 vs-70tps..pbf 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 c/w average on-state current (a) maximum allowable case temperature (c) 70 80 90 100 110 120 130 0 1020304050607080 30? 60? 90? 120? 180? conduction angle rthjc (dc) = 0.27 ?c/w average on-state current (a) maximum allowable case temperature (c) 60 70 80 90 100 110 120 130 0 102030405060708090 dc 30? 60? 90? 120? 180? conduction period rthjc (dc) = 0.27 ?c/w
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 4 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics average on-state current (a) maximum average on-state power loss (w) 0 20 40 60 80 100 120 140 0 10203040506070 rms limit conduction angle 180? 120? 90? 60? 30? tj = 125?c average on-state current (a) maximum average on-state power loss (w) 0 30 60 90 120 150 01530456075 rms limit conduction period tj = 125?c 180? 120? 90? 60? 30? dc peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 110100 400 600 700 800 900 1000 v s -70tp s .. s erie s at any rated load condition and with rated v rrm applied following s urge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 500 300 400 600 700 800 900 1000 1100 1200 0.01 0.1 1 10 peak half sine wave forward current (a) maximum non-repetitive s urge current ver s u s pul s e train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied pulse train duration (s) 500 instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 0.511.522.533.5 tj = 25c tj = 125c
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 5 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - gate characteristics fig. 9 - thermal impedance z thjc characteristics in s tantaneou s g ate current (a) in s tantaneou s g ate voltage (v) 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 t j = 25 c t j = - 40 c t j = 125 c rectangular gate pul s e a) recommended load line for rated di f /dt: 20 v, 30 t r = 0.5 s , t p > = 6 s b) recommended load line for < = 30 % rated di f /dt: 20 v, 65 t r = 1 s , t p > = 6 s (a) (b) (1) (2) (4) (3) fre q uency limited by p g (av) v g d i g d (1) p g m = 100 w, t p = 500 s (2) p g m = 50 w, t p = 1 m s (3) p g m = 20 w, t p = 25 m s (4) p g m = 10 w, t p = 5 m s square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 70tps.. series
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 6 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) prefered p/n quantity per t/r minimum order quantity packaging description VS-70TPS12PBF 25 500 antistatic plastic tube vs-70tps16pbf 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95073 part marking information www.vishay.com/doc?95070 2 - current rating (70 = 70 a) 1 - vishay semiconductors product 3 - circuit configuration: 4 - package: 5 t = thyristor - type of silicon: 6 - voltage code x 100 = v rrm p = super to-247 s = standard recovery rectifier 7 - pbf = lead (pb)-free 12 = 1200 v 16 = 1600 v device code 5 1 3 2 4 6 7 vs- 70 t p s 16 pbf
document number: 95073 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 10-dec-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 super to-247 outline dimensions vishay high power products dimensions in millimeters (inches) notes (1) dimension and tolerancing per asme y14.5m-1994 (2) controlling dimension: millimeter (3) outline conforms to jedec outline to-274aa 2.15 (0.0 8 4) 1.45 (0.05 8 ) 0.13 (0.005) 5.50 (0.216) 4.50 (0.17 8 ) 4 b 3 x 1.20 (0.047) 0.90 (0.035) 2.35 (0.092) 1.65 (0.065) a 16.10 (0.632) 15.10 (0.595) 2 x r 20. 8 0 (0. 8 1 8 ) 19. 8 0 (0.7 8 0) c 14. 8 0 (0.5 8 2) 13. 8 0 (0.544) 5.45 (0.215) 2 x 4.25 (0.167) 3. 8 5 (0.152) 3 x 0.25 (0.010) b a m m 0.25 (0.010) b a mm 13.90 (0.547) 13.30 (0.524) 1.30 (0.051) 0.70 (0.02 8 ) 16.10 (0.633) 15.50 (0.611) 4 ee ? 1.60 (0.063) max. section e - e lead assignments mosfet 1 - gate 2 - drain 3 - so u rce 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector 3 2 1
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